Q62702-A1028 Datasheet PDF Download, Siemens Semiconductor Group





Q62702-A1028 Datasheet PDF File Download

Part Number Q62702-A1028
Description Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
Manufacture Siemens Semiconductor Group
Total Page 4 Pages
PDF Download Download Q62702-A1028 Datasheet PDF

Features: BAT 62-02W Silicon Schottky Diode • Lo w barrier diode for detectors up to GHz frequencies 2 1 VES05991 ESD: Elec trostatic discharge sensitive device, o bserve handling precaution Type BAT 62 -02W Marking Ordering Code L Q62702-A1 028 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diod e reverse voltage Forward current Junct ion temperature Storage temperature Sym bol Value 40 40 150 -55 ...+150 Unit V mA °C VR IF Tj Tstg Thermal Resistan ce Junction - ambient 1) RthJA RthJS ≤ 650 ≤ 810 K/W Junction - solder ing point 1) Package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Jul-02-1 998 1998-11-01 BAT 62-02W Electrical Characteristics at TA = 25°C, unless o therwise specified. Parameter Symbol Va lues min. DC characteristics Reverse cu rrent typ. 0.58 max. 10 1 Unit IR VF - µA V VR = 40 V Forward voltage I F = 2 mA AC characteristics Diode capa citance CT CC R0 Ls - 0.35 0.09 225 0.6 0.6 - pF VR = 1 V, f = 1 M.

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Silicon Schottky Diode
Low barrier diode for detectors up to GHz
frequencies
BAT 62-02W
2
1 VES05991
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type
Marking Ordering Code
Pin Configuration
BAT 62-02W L
Q62702-A1028
1=C
2=A
Package
SCD-80
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Junction temperature
Storage temperature
Thermal Resistance
Junction - ambient 1)
Junction - soldering point
Symbol
VR
IF
Tj
Tstg
RthJA
RthJS
Value
40
40
150
-55 ...+150
Unit
V
mA
°C
650
810
K/W
1) Package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm
SSeemmicioconndduuctcotor rGGrorouupp
11
Jul1-90928--11919-081

           






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