Q62702-A1036 Datasheet: Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)





Q62702-A1036 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Datasheet

Part Number Q62702-A1036
Description Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Manufacture Siemens Semiconductor Group
Total Page 4 Pages
PDF Download Download Q62702-A1036 Datasheet PDF

Features: BAR 63... Silicon PIN Diode l PIN diod e for high speed switching of RF signal s l Low forward resistance l Very low c apacitance l For frequencies up to 3 GH z Type BAR 63 BAR 63-04 BAR 63-05 BAR 6 3-06 Marking G3 G4 G5 G6 Ordering code (tape and reel) Q62702-A1036 Q62702-A10 37 Q62702-A1038 Q62702-A1039 Pin config uration Package 1 2 3 A C SOT-23 A C C/ A A A C/C C C A/A 1) Maximum ratings P arameter Reverse voltage Forward curren t Total Power dissipation TS ≤ 80°C BAR 63-04,-05,-06 TS ≤ 55°C Operatin g temperature range Storage temperature range Thermal resistance Junction-ambi ent BAR63 BAR 63-04,-05,-06 1) Symbol BAR 63 50 100 250 250 -55 +150°C -55. ..+150°C Unit V mA mW °C °C VR IF Ptot Top Tstg Rth JA ≤ 450 ≤ 540 K/W Junction-soldering point BAR64 BAR 63-04,-05,-06 Rth JS ≤ 280 ≤ 380 _________________________ 1)Package mou nted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 23 .02.95 BAR 63... Electrical characteristics at TA = 25 °C, unless otherwise spe.

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BAR 63...
Silicon PIN Diode
l PIN diode for high speed switching of RF signals
l Low forward resistance
l Very low capacitance
l For frequencies up to 3 GHz
Type
BAR 63
BAR 63-04
BAR 63-05
BAR 63-06
Marking
G3
G4
G5
G6
Ordering code
(tape and reel)
Q62702-A1036
Q62702-A1037
Q62702-A1038
Q62702-A1039
Pin configuration Package 1)
1 23
A - C SOT-23
A C C/A
A A C/C
C C A/A
Maximum ratings
Parameter
Reverse voltage
Forward current
Total Power dissipation TS 80°C
BAR 63-04,-05,-06
TS 55°C
Operating temperature range
Storage temperature range
Thermal resistance
Junction-ambient 1)
BAR63
BAR 63-04,-05,-06
Junction-soldering point
BAR64
BAR63-04,-05,-06
Symbol
VR
IF
Ptot
Top
Tstg
Rth JA
Rth JS
BAR 63
50
100
250
250
-55 +150°C
-55...+150°C
Unit
V
mA
mW
°C
°C
450
540
280
380
K/W
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A01, 23.02.95

           






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