Q62702-A917 Datasheet | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode)





Q62702-A917 PDF File (Datasheet) Download

Part Number Q62702-A917
Description Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode)
Manufacture Siemens Semiconductor Group
Total Page 3 Pages
PDF Download Download Q62702-A917 PDF File

Features: Silicon Switching Diodes BAS 79 A … B AS 79 D Switching applications q High breakdown voltage q Common cathode q T ype BAS 79 A BAS 79 B BAS 79 C BAS 79 D Marking BAS 79 A BAS 79 B BAS 79 C BA S 79 D Ordering Code (tape and reel) Q 62702-A914 Q62702-A915 Q62702-A916 Q627 02-A917 Pin Configuration Package1) S OT-223 Maximum Ratings Parameter Symbo l BAS 79 A Reverse voltage Peak reverse voltage Forward current Peak forward c urrent Surge forward current, t = 1 µs Total power dissipation, TS = 114 ˚C2 ) Junction temperature Storage temperat ure range Thermal Resistance Junction - ambient2) Junction - soldering point 1 ) 2) Values BAS BAS 79 B 79 C 100 100 1 1 10 1.2 150 – 65 … + 150 200 200 Unit BAS 79 D 400 400 A V VR VRM IF IFM IFS Ptot Tj Tstg 50 50 W ˚C Rth JA Rth JS ≤ ≤ 170 30 K/W For d etailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Se miconductor Group 1 5.91 BAS 79 A … BAS 79 D Electrical Characteristics at.

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Silicon Switching Diodes
q Switching applications
q High breakdown voltage
q Common cathode
BAS 79 A
… BAS 79 D
Type
BAS 79 A
BAS 79 B
BAS 79 C
BAS 79 D
Marking
BAS 79 A
BAS 79 B
BAS 79 C
BAS 79 D
Ordering Code
(tape and reel)
Q62702-A914
Q62702-A915
Q62702-A916
Q62702-A917
Pin Configuration
Package1)
SOT-223
Maximum Ratings
Parameter
Symbol
Reverse voltage
VR
Peak reverse voltage
VRM
Forward current
IF
Peak forward current
IFM
Surge forward current, t = 1 µs
IFS
Total power dissipation, TS = 114 ˚C2) Ptot
Junction temperature
Tj
Storage temperature range
Tstg
BAS
79 A
50
50
Values
BAS BAS
79 B 79 C
100 200
100 200
1
1
10
1.2
150
– 65 … + 150
BAS
79 D
400
400
Unit
V
A
W
˚C
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Rth JA
Rth JS
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
170
30
K/W
Semiconductor Group
1
5.91

        






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