Q62702-A919 Datasheet PDF Download, Siemens Semiconductor Group





(PDF) Q62702-A919 Datasheet Download

Part Number Q62702-A919
Description Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode)
Manufacture Siemens Semiconductor Group
Total Page 4 Pages
PDF Download Download Q62702-A919 Datasheet PDF

Features: Silicon Low Leakage Diode Low-leakage ap plications q Medium speed switching tim es q Single diode q BAS 116 Type BAS 116 Marking JVs Ordering Code (tape a nd reel) Q62702-A919 Pin Configuration Package1) SOT-23 Maximum Ratings Par ameter Reverse voltage Peak reverse vol tage Forward current Surge forward curr ent, t = 1 µs Total power dissipation, TS = 54 ˚C Junction temperature Stora ge temperature range Thermal Resistance Junction - ambient2) Junction - solder ing point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF IFS Ptot Tj Tstg Values 75 85 250 4.5 370 150 – 65 … + 150 Un it V mA A mW ˚C 330 260 K/W 1) 2) For detailed information see chapter Pa ckage Outlines. Package mounted on epox y pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu . Semiconductor Group 1 5.91 BAS 11 6 Electrical Characteristics at TA = 2 5 ˚C, unless otherwise specified. Para meter Symbol min. DC characteristics Br eakdown voltage I(BR) = 100 µA Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current VR = 75 V.

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Silicon Low Leakage Diode
q Low-leakage applications
q Medium speed switching times
q Single diode
BAS 116
Type
BAS 116
Marking
JVs
Ordering Code
(tape and reel)
Q62702-A919
Pin Configuration
Package1)
SOT-23
Maximum Ratings
Parameter
Reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total power dissipation, TS = 54 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Symbol
VR
VRM
IF
IFS
Ptot
Tj
Tstg
Values
Unit
75 V
85
250 mA
4.5 A
370 mW
150 ˚C
– 65 … + 150
Rth JA
Rth JS
330
260
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91

           






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