POWER TRANSISTORS. MJE3055 Datasheet

MJE3055 TRANSISTORS. Datasheet pdf. Equivalent

Part MJE3055
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Feature MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE2955T/D Complementary Silicon Pla.
Manufacture ON
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MJE3055
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE2955T/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general–purpose amplifier and switching applications.
DC Current Gain Specified to 10 Amperes
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎHigh Current Gain — Bandwidth Product —
fT = 2.0 MHz (Min) @ IC = 500 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMJE3055T, MJE2955T
VCEO
VCB
VEB
IC
IB
PD†
60 Vdc
70 Vdc
5.0 Vdc
10 Adc
6.0 Adc
75 Watts
0.6 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
– 55 to + 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
θJC
1.67 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΆSafe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
PNP
MJE2955T
*
NPN
MJE3055T
*
*Motorola Preferred Device
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 VOLTS
75 WATTS
CASE 221A–06
TO–220AB
10
7.0 100 µs
5.0 5.0 ms 1.0 ms
dc
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
TJ = 150°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25°C (D = 0.1)
7.0 10
20 30
50 60
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. Active–Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150_C. TC is vari-
vable depending on conditions. Second breakdown pulse lim-
its are valid for duty cycles to 10% provided TJ(pk) 150_C.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown. (See AN415A)
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1



MJE3055
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMJE2955T MJE3055T
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = 30 Vdc, IB = 0)
Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCB = 70 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 70 Vdc, IE = 0, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain (1)
(IC = 4.0 Adc, VCE = 4 0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 4.0 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv vCurrent–Gain–Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 20%.
Symbol
Min
VCEO(sus)
ICEO
ICEX
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
fT
60
20
5.0
2.0
Max Unit
— Vdc
700 µAdc
mAdc
1.0
5.0
mAdc
1.0
10
5.0 mAdc
100
Vdc
1.1
8.0
1.8 Vdc
— MHz
500
300
200 TJ = 150°C
100
25°C
50
– 55°C
30
20
VCE = 2.0 V
10
5.0
0.01 0.02
0.05 0.1 0.2 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
5.0 10
90
80
70
60
50
40 MJE3055T
MJE2955T
30
20
10
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 3. Power Derating
MJE2955T
2.0
MJE3055T
1.4
TJ = 25°C
1.6
1.2 TJ = 25°C
1.0
1.2 0.8 VBE(sat) @ IC/IB = 10
0.8 VBE(sat) @ IC/IB = 10
0.6 VBE @ VCE = 2.0 V
0.4
0
0.1
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 10
0.2 0.3 0.5
1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMP)
0.4
0.2
VCE(sat) @ IC/IB = 10
5.0 10
0
0.1 0.2 0.3 0.5
1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
5.0
10
2 Motorola Bipolar Power Transistor Device Data





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