MMBT3904LT1 TransistorNPN Silicon Datasheet

MMBT3904LT1 Datasheet, PDF, Equivalent


Part Number

MMBT3904LT1

Description

General Purpose Transistor(NPN Silicon)

Manufacture

ON

Total Page 6 Pages
Datasheet
Download MMBT3904LT1 Datasheet


MMBT3904LT1
MMBT3904LT1
Preferred Device
General Purpose Transistor
NPN Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
40 Vdc
60 Vdc
6.0 Vdc
200 mAdc
Characteristic
Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
417
−55 to
+150
°C/W
°C
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
3
1
2
SOT−23 (TO−236)
CASE 318
Style 6
1AM
1AM = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
MMBT3904LT1 SOT−23 3000 / Tape & Reel
MMBT3904LT1G SOT−23 3000 / Tape & Reel
MMBT3904LT3 SOT−23 10000 / Tape & Reel
MMBT3904LT3G SOT−23 10000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 5
1
Publication Order Number:
MMBT3904LT1/D

MMBT3904LT1
MMBT3904LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
Fall Time
(VCC = 3.0 Vdc,
IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
HFE
VCE(sat)
VBE(sat)
40
60
6.0
40
70
100
60
30
0.65
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
300
1.0
0.5
100
1.0
td
tr
ts
tf
DUTY CYCLE = 2%
300 ns
−0.5 V
+10.9 V
10 k
< 1 ns
+3 V
275
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
+10.9 V
CS < 4 pF*
0
−9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
10 k
1N916
Max Unit
− Vdc
− Vdc
− Vdc
50 nAdc
50 nAdc
300
Vdc
0.2
0.3
Vdc
0.85
0.95
− MHz
4.0 pF
8.0 pF
10 k ohms
8.0 X 10− 4
400 −
40 mmhos
5.0 dB
35
ns
35
200
ns
50
+3 V
275
CS < 4 pF*
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
http://onsemi.com
2


Features MMBT3904LT1 Preferred Device General Pu rpose Transistor NPN Silicon Features • Pb−Free Packages are Available MA XIMUM RATINGS Rating Collector −Emitt er Voltage Collector −Base Voltage Em itter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO I C Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc http://onsemi.com COLLECTOR 3 1 B ASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Dera te above 25°C Thermal Resistance Junct ion to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient Junction and St orage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 −55 to +150 Unit mW mW/°C °C/W mW m W/°C °C/W °C 1 2 SOT−23 (TO−236) CASE 318 Style 6 1AM = Specific Device Code 1AM 3 MARKING DIAGRAM 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. ORDERING INFORMATION Device MMBT3904LT1 MMBT3904LT1G MMBT390.
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