NPN Transistor. NTE2640 Datasheet

NTE2640 Transistor. Datasheet pdf. Equivalent

Part NTE2640
Description Silicon NPN Transistor
Feature NTE2640 Silicon NPN Transistor Color TV Horizontal Deflection Output Features: D High Speed D High C.
Manufacture NTE
Datasheet
Download NTE2640 Datasheet




NTE2640
NTE2640
Silicon NPN Transistor
Color TV Horizontal Deflection Output
Features:
D High Speed
D High Collector–Emitter Breakdown Voltage
D High Reliability
D On–Chip Damper Diode
Absolute Maximum Ratings: (TA + 25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Dissipation, PC
TA + 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC + 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA + 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICBO VCE = 800V, IE = 0
– – 10 µA
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage
ICES
IEBO
VCEO(sus)
VCE = 1500V, RBE = 0
VEB = 4V, IC = 0
IC = 100mA, IB = 0
– – 1.0 mA
40 –
– mA
800 – – V
Collector–Emitter Saturation Voltage VCE(sat) IC = 3.15A, IB = 630mA
– – 3.0 V
Base–Emitter Saturation Voltage
VBE(sat) IC = 3.15A, IB = 630mA
– – 1.5 V
DC Current Gain
Diode Forward Voltage
Fall Time
hFE VCE = 5V, IC = 500mA
10 –
VCE = 5V, IC = 3.5A
5–8
VF IEC = 6A
––2V
tf VCC = 200V, VBE = –2V, IC = 2A,
– – 0.3 µs
IB1 = 400mA, IB2 = 800mA,
Pulse Width = 20µs, Duty Cycle 1%



NTE2640
.138
(3.5)
.634
(16.1)
.394 (10.0)
Isol
BC
E
.177 (4.5)
.110 (2.8)
.283
(7.2)
.630
(16.0)
.142
(3.6)
.551
(14.0)
.100 (2.54)
.024
(0.6)







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