N-Channel MOSFET. NTE2920 Datasheet

NTE2920 MOSFET. Datasheet pdf. Equivalent

Part NTE2920
Description N-Channel MOSFET
Feature NTE2920 MOSFET N−Ch, Enhancement Mode High Speed Switch TO3P Type Package D Features: D Drain Curr.
Manufacture NTE
Datasheet
Download NTE2920 Datasheet




NTE2920
NTE2920
MOSFET
NCh, Enhancement Mode
High Speed Switch
TO3P Type Package
D
Features:
D Drain Current: ID = 70A at TC = +25C
D Drain Source Voltage: VDSS = 60V Min
D Static DrainSource OnResistance: RDS(on) = 0.014Max
D Fast Switching
G
S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Continuous GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Continuous
TTCC
=
=
Drain Current,
+25C . . . . . . .
I.D.
+100C . . . . . . . .
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70A
64A
Single Pulse Drain Current, IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360A
Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +175C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
DrainSource Breakdown Voltage
Gate Threshold Voltage
DrainSource OnResistance
GateSource Body Leakage Current
Zero Gate Voltage Drain Current
Forward ONVoltage
Forward Transconductance
V(BR)DSS
VGS(th)
RDS(on)
IGSS
IDSS
VSD
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VGS = 10V, ID = 54A
VGS = 20V, VDS = 0V
VDS = 60V, VGS = 0V
IS = 90A, VGS = 0V
VDS = 25V, ID = 54A
Min Typ Max Unit
60 − − V
2.0 4.0 V
− − 0.014
− − 100 nA
− − 25 A
− − 2.5 V
25 − − S
Rev. 1115



NTE2920
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Total Gate Charge
GatetoSource Charge
GatetoDrain (“Miller”) Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
ID = 64A, VDS = 48V, VGS = 10V,
Note 1
VDD = 30V, ID = 64A, RG = 6.2,
RD = 0.45, Note 1
Between lead, .250in. (6.0) mm from
package and center of die contact
VGS = 0V, VDS = 25V, f = 1MHz
Typ
20
160
83
150
5.0
13
4500
2000
300
Max
160
48
54
Unit
nC
nC
nC
ns
ns
ns
ns
nH
nH
pF
pF
pF
SourceDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS Note 2
ISM Note 1
VSD TJ = +25C, IS = 90A, VGS = 0V,
Note 3
− − 70 A
− − 360 A
− − 2.5 V
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
trr TJ = +25C, IF = 64A,
Qrr di/dt = 100A/s, Note 1
270 540 ns
1.1 2.2 C
ton Intrinsic turnon time is neglegible (turnon is dominated by LS+LD)
Note 1. Pulse width 300s; duty cycle 2%.
Note 2. Current limited by the package, (Die Current = 90A).
Note 3. Repetitive rating; pulse width limited by maximum junction temperature.







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