N-Channel MOSFET. NTE2944 Datasheet

NTE2944 MOSFET. Datasheet pdf. Equivalent

Part NTE2944
Description N-Channel MOSFET
Feature NTE2944 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package Features:.
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Datasheet
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NTE2944
NTE2944
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Full Pack Type Package
Features:
D Low Static DrainSource ON Resistance
D Improved Inductive Ruggedness
D Fast Switching Times
D Low Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
D TO220 Type Isolated Package
D
G
S
Absolute Maximum Ratings:
DrainSource Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
DrainGate Voltage (RGS = 1M+ , Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Drain CCuornretinntu, oIDus
PulsTTeCCd==(N++o21t50e50C25C).
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9.8A
6.8A
72A
Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.5A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.8A
Total
PDowerearteDiAsbsiopvaetio2n55(CTC.
=
..
+255C),
.......
.P.D.
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. . . . 40W
0.32W/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +3005C
Thermal Resistance:
TMyapxicimaluCmaJsuenctotioSnintko(MCaosuen,tiRngthJsCur.fa. c. e.
....
flat,
........
smooth,
....
and
.........
greased),
Maximum JunctiontoAmbient (Free Air Operation), RthJA . . . . . . . .
.....
R. .th.C.S.
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3.12K/W
. 0.5K/W
62.5K/W
Note 1. TJ = +255 to +1505C.
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 2.7mH, VDD = 50V, RG = 25+ , Starting TJ = +255C.
Rev. 1013



NTE2944
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage BVDSS VGS = 0v, ID = 250.A
200 − − V
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250.A
2.0 4.0 V
GateSource Leakage Forward
IGSS VGS = 20V
− − 100 nA
GateSource Leakage Reverse
IGSS VGS = 20V
− − −100 nA
Zero Gate Voltage Drain Current
IDSS VDS = Max. Rating, VGS = 0
− − 250 .A
VDS = 0.8 Max. Rating, TC = +1255C
− − 1000 .A
Static DrainSource ON Resistance RDS(on) VGS = 10V, ID = 9A, Note 4
− − 0.18 +
Forward Transconductance
gfs VDS . 50V, ID = 9A, Note 4
6.0 9.5 mhos
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
1400 pF
Output Capacitance
Coss
240 pF
Reverse Transfer Capacitance
Crss
95 pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
td(on)
tr
td(off)
V(MDOD S=F0E.5T
BsVwDitSchS,inIDg
=tim18eAs ,aZreO
= 9.1+ ,
essentially
independent of operating temperature)
30 ns
60 ns
80 ns
Fall Time
tf
− − 60 ns
Total Gate Charge
(GateSource Plus GateDrain)
GateSource Charge
GateDrain (“Miller”) Charge
Qg
Qgs
RVGatSin=g,1(0GVa,teIDc=ha1r8gAe,isVDeSss=en0t.ia8llMy ax.
independent of operating temperature)
Qgd
− − 64 nC
12.3 nC
25.3 nC
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
IS (Body Diode)
ISM (Body Diode) Note 2
VSD TJ = +255C, IS = 18A, VGS = 0V, Note 4
trr TJ = +255C, IF = 18A, dIF/dt = 100A/.s
− − 18 A
− − 72 A
−−2V
650 ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width 3 300.s, Duty Cycle 3 2%.







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