Speed Switch. NTE2968 Datasheet

NTE2968 Switch. Datasheet pdf. Equivalent

Part NTE2968
Description MOSFET N-Channel / Enhancement Mode High Speed Switch
Feature NTE2968 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology.
Manufacture NTE
Datasheet
Download NTE2968 Datasheet




NTE2968
NTE2968
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Low Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower Leakage Current
D Low Static Drain–Source On–State Resistance
Absolute Maximum Ratings:
Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Drain Current, ID
Continuous
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27.8A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180A
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 675mJ
Avalanche Current (Note 1), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27.8mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.22W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C
Thermal Resistance:
Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45°C/W
Typical Case–to–Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.24°C/W
Maximum Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 0.5mH, IAS = 45A, VDD = 25V, RG = 25, Starting TJ = +25°C.
Note 3. ISD 45A, di/dt 370A/µs, VDD BVDSS, Starting TJ = +25°C.



NTE2968
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
DrainSource Breakdown Voltage BVDSS VGS = 0V, ID = 250µA
Breakdown Voltage Temperature DBV/DTJ ID = 250µA
Coefficient
Gate Threshold Voltage
VGS(th) VDS = 5V, ID = 250µA
GateSource Leakage Forward
IGSS VGS = 30V
GateSource Leakage Reverse
IGSS VGS = 30V
Zero Gate Voltage Drain Current
IDSS VDS = 200V, VGS = 0
VDS = 160V, TC = +150°C
Static DrainSource ON Resistance RDS(on) VGS = 10V, ID = 22.5A, Note 4
Forward Transconductance
gfs VDS = 40V, ID = 22.5A, Note 4
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
TurnOn Delay Time
Rise Time
td(on)
tr
VDD = 100V, ID = 45A, RG = 5.3,
Note 4, Note 5
TurnOff Delay Time
td(off)
Fall Time
tf
Total Gate Charge
GateSource Charge
Qg VGS = 10V, ID = 45A, VDS = 160V,
Qgs Note 4, Note 5
GateDrain (Miller) Charge
Qgd
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS (Body Diode)
ISM (Body Diode) Note 1
VSD TJ = +25°C, IS = 45A, VGS = 0V, Note 4
trr TJ = +25°C, IF = 45A, dIF/dt = 100A/µs
Qrr
Min Typ Max Unit
200 – – V
0.20 V/°C
2.0 4.0 V
– – 100 nA
– – –100 nA
– – 10 µA
– – 100 µA
– – 0.065
25.06 mhos
3030 3940 pF
530 610 pF
255 295 pF
22 60 ns
22 60 ns
79 170 ns
36 80 ns
117 152 nC
25 nC
48.8 nC
– – 45 A
– – 180 A
– – 1.5 V
210 ns
1.67 µC
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width 250µs, Duty Cycle 2%.
Note 5. Essentially independent of operating temperature.







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