Speed Switch. NTE2969 Datasheet

NTE2969 Switch. Datasheet pdf. Equivalent

Part NTE2969
Description MOSFET N-Channel / Enhancement Mode High Speed Switch
Feature NTE2969 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology.
Manufacture NTE
Datasheet
Download NTE2969 Datasheet




NTE2969
NTE2969
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Low Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower Leakage Current
D Low Static Drain–Source On–State Resistance
Absolute Maximum Ratings:
Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Drain Current, ID
Continuous
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.1A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1429mJ
Avalanche Current (Note 1), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27.8mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V/ns
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.22W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C
Thermal Resistance:
Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45°C/W
Typical Case–to–Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.24°C/W
Maximum Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 4mH, IAS = 25A, VDD = 50V, RG = 27, Starting TJ = +25°C.
Note 3. ISD 25A, di/dt 320A/µs, VDD BVDSS, Starting TJ = +25°C.



NTE2969
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
DrainSource Breakdown Voltage BVDSS VGS = 0V, ID = 250µA
Breakdown Voltage Temperature DBV/DTJ ID = 250µA
Coefficient
Gate Threshold Voltage
VGS(th) VDS = 5V, ID = 250µA
GateSource Leakage Forward
IGSS VGS = 30V
GateSource Leakage Reverse
IGSS VGS = 30V
Zero Gate Voltage Drain Current
IDSS VDS = 400V, VGS = 0
VDS = 320V, TC = +150°C
Static DrainSource ON Resistance RDS(on) VGS = 10V, ID = 12.5A, Note 4
Forward Transconductance
gfs VDS = 50V, ID = 12.5A, Note 4
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
TurnOn Delay Time
Rise Time
td(on)
tr
VDD = 200V, ID = 25A, RG = 5.3,
Note 4, Note 5
TurnOff Delay Time
td(off)
Fall Time
tf
Total Gate Charge
GateSource Charge
Qg VGS = 10V, ID = 25A, VDS = 320V,
Qgs Note 4, Note 5
GateDrain (Miller) Charge
Qgd
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS (Body Diode)
ISM (Body Diode) Note 1
VSD TJ = +25°C, IS = 25A, VGS = 0V, Note 4
trr TJ = +25°C, IF = 25A, dIF/dt = 100A/µs
Qrr
Min Typ Max Unit
400 – – V
0.20 V/°C
2.0 4.0 V
– – 100 nA
– – –100 nA
– – 10 µA
– – 100 µA
– – 0.2
18.91 mhos
3180 4130 pF
435 500 pF
200 240 pF
22 55 ns
22 60 ns
127 260 ns
38 85 ns
140 182 nC
21 nC
64.8 nC
– – 25 A
– – 100 A
– – 1.5 V
484 ns
7.6 µC
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width 250µs, Duty Cycle 2%.
Note 5. Essentially independent of operating temperature.







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