Speed Switch. NTE2970 Datasheet

NTE2970 Switch. Datasheet pdf. Equivalent

Part NTE2970
Description MOSFET N-Channel / Enhancement Mode High Speed Switch
Feature NTE2970 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC–DC Converter .
Manufacture NTE
Datasheet
Download NTE2970 Datasheet




NTE2970
NTE2970
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D SMPS
D DC–DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate–Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66A
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275W
Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, Rth(ch–c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45°C/W
Electrical Characteristics: (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage
Gate–Source Breakdown Voltage
Gate–Source Leakage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(th)
RDS(on)
VDS(on)
|yfs|
VDS = 0V, ID = 1mA
VDS = 0V, IG = ±100µA
VGS = ±25V, VDS = 0V
VDS = 500V, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 11A
VGS = 10V, ID = 11A
VGS = 10V, ID = 11A
Min Typ Max Unit
500 – – V
±30 – – V
– – ±10 µA
– – 1.0 mA
2.0 3.0 4.0 V
– 0.22 0.29
– 2.4 3.2 V
7 10 –
S



NTE2970
Electrical Characteristics (Contd): (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
2800
350
55
pF
pF
pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Diode Forward Voltage
td(on)
tr
td(off)
tf
VSD
VDD = 200V, ID = 11A, VGS = 10V,
RGEN = RGS = 50
IS = 11A, VGS = 0V
60 ns
80 ns
270 ns
80 ns
1.5 2.0 V
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
G DS
.215 (5.47)







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