Speed Switch. NTE2976 Datasheet

NTE2976 Switch. Datasheet pdf. Equivalent

Part NTE2976
Description MOSFET N-Channel / Enhancement Mode High Speed Switch
Feature NTE2976 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Input Capacitance D Low.
Manufacture NTE
Datasheet
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NTE2976
NTE2976
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Low Input Capacitance
D Low Static RDS(on)
D Fast Switching Time
D Guaranteed Avalanche Resistance
Applications:
D Switching Power Supply of AC 240V Input
D High Voltage Power Supply
D Inverter
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Gate–Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current, ID
Continuous DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak (Pulse Width 10µs, Duty Cycle 1/100) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
Continuous DC Source Current, IS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Repetitive Avalanche Current (Tch = +150°C), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Single Avalanche Energy (Tch = +25°C), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190mJ
Repetitive Avalanche Energy (Tch = +25°C), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mJ
Operating Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Dielectric Strength (Terminals–to–Case, AC, 1 minute), Vdis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV
Mounting Torque, TOR
Maximum . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5Nm
Recommended . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3Nm



NTE2976
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
DrainSource Breakdown Voltage
Zero Gate Voltage Drain Current
GateSource Leakage Current
Forward Transconductance
Static DrainSource OnState Resistance
Gate Threshold Voltage
SourceDrain Diode Forward Voltage
Total Gate Charge
Input Capacitance
Reverse Transfer Capacitance
V(BR)DSS ID = 1mA, VGS = 0V
IDSS VDS = 700V, VGS = 0V
IGSS VGS = ±30V, VDS = 0V
gfs ID = 3A, VDS = 10V
RDS(on) ID = 3A, VGS = 10V
VTH ID = 1mA, VDS = 10V
VSD IS = 3A, VGS = 0V
Qg VDD = 400V, VGS = 10V, ID = 6A
Ciss VDS = 10V, VGS = 0V, f = 1MHz
Crss
Output Capacitance
TurnOn Time
TurnOff Time
Coss
ton
toff
ID = 3A, RL = 50, VGS = 10V
Min Typ Max Unit
700 – – V
– – 250 µA
– – ±0.1 µA
35S
1.5 2.0
2.5 3.0 3.5 V
– – 1.5 V
35 nC
1250 pF
250 pF
530 pF
60 110 ns
160 250 ns
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
.122 (3.1)
Dia
.165
(4.2)
.173 (4.4)
Max
.114 (2.9)
Max
GD S
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max







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