N-Channel MOSFET. NTE2981 Datasheet

NTE2981 MOSFET. Datasheet pdf. Equivalent

Part NTE2981
Description N-Channel MOSFET
Feature NTE2981 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Type Package Feature.
Manufacture NTE
Datasheet
Download NTE2981 Datasheet




NTE2981
NTE2981
Logic Level MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO251 Type Package
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche rated
D Logic Level Gate Drive
D RDS(on) Specified at VGS = 4V & 5V
D TO251 Type Package
D
G
Absolute Maximum Ratings:
S
Drain
CCPuuorlnrsTTeteiCCnndtu==,(oIN++Duo21st50e(50VC15GC)S. ...=...
5V)
....
....
....
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
7.7A
4.9A
31A
Total
PDowerearteDiAsbsiopvaetio2n55(CTC.
=
..
+255C),
.......
.P.D.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
. . . . 42W
0.33W/5C
Total
Power Dissipation (PC
Derate Above 255C .
Board
......
Mount,
.......
T. .C.
= +255C,
........
Note
.....
2),
...
P. .D.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
. . . . 2.5W
0.02W/5C
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +10V
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.7A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2mJ
Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +2605C
Maximum Thermal Resistance:
JJuunnccttiioonn−−ttoo−−CAmasbeie, nRtth(JPCCB. .M. .o.u.n.t.,
JunctiontoAmbient, RthJA . . . . . .
.....
Note
.....
...
2),
...
.....
R. .th.J.A.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
3.05C/W
505C/W
1105C/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. When mounted on a 1” square PCB (FR4 or G10 material).
Note 3. L = 5.3mH, VDD = 25V, RG = 253 , Starting TJ = +255C, IAS = 7.7A.
Note 4. ISD 3 9.2A, di/dt 3 110A/5 s, VDD 3 V(BR)DSS, TJ 3 +1505C.
Rev. 1013



NTE2981
Electrical Characteristics: (TJ = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
DrainSource Breakdown Voltage
BVDSS VGS = 0V, ID = 2505 A
Breakdown Voltage Temperature
Coefficient
+V(B+RT)JDSS/ Reference to +255C, ID = 1mA
Static DrainSource ON Resistance RDS(on) VGS = 5V, ID = 4.6A, Note 5
VGS = 4V, ID = 3.9A, Note 4
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 2505 A
Forward Transconductance
gfs VDS = 50V, ID = 4.6A, Note 5
DraintoSource Leakage Current
IDSS
VDS = 100V, VGS = 0
VDS = 80V, VGS = 0V, TC = +1255C
GateSource Leakage Forward
IGSS
VGS = 10V
GateSource Leakage Reverse
IGSS
VGS = 10V
Total Gate Charge
Qg VGS = 5V, ID = 9.2A, VDS = 80V, Note 5
GateSource Charge
Qgs
GateDrain (“Miller”) Charge
Qgd
TurnOn Delay Time
Rise Time
td(on)
tr
VRDDD==55.203V,, NIDo=te95.2A, RG = 9.03 ,
TurnOff Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
Internal Source Inductance
LD Between lead, 6mm (0.25”) from
LS package and center of die contact
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SourceDrain Diode Ratings and Characteristics
100
0.13
−−
−−
1.0
4.4
−−
−−
−−
−−
−−
−−
−−
9.8
64
21
27
4.5
7.5
490
150
30
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
IS (Body Diode)
−−
ISM (Body Diode) Note 1
−−
VSD TJ = +255C, IS = 7.7A, VGS = 0V, Note 5
trr
Qrr
TNJot=e+5255C, IF = 9.2A, di/dt = 100A/5 s,
110
0.8
ton
Intrinsic turnon time is neglegible
(turnon is dominated by LS + LD)
Max Unit
V
V/5C
0.27 3
0.38 3
2.0 V
mhos
25 5 A
250 5 A
100 nA
100 nA
12 nC
3.0 nC
7.1 nC
ns
ns
ns
ns
nH
nH
pF
pF
pF
7.7 A
31 A
2.5 V
140 ns
1.0 5 C
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 5. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)