N-Channel MOSFET. NTE2987 Datasheet

NTE2987 MOSFET. Datasheet pdf. Equivalent

Part NTE2987
Description N-Channel MOSFET
Feature NTE2987 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Feature.
Manufacture NTE
Datasheet
Download NTE2987 Datasheet




NTE2987
NTE2987
Logic Level MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Type Package
Features:
D Avalanche Rugged Technology
D Logic Level Gate Drive
D RDS(on) = 0.09Typ. at VGS = 5V
D +175C Operating Temperature
D Fast Switching
D Low Gate Charge
D High Current Capability
D
G
S
Absolute Maximum Ratings:
Drain CCuornretinntu, oIDus
PulsTTeCCd==(N++o21t50e0C1C).
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20A
14A
80A
Total
PDowerearteDiAsbsiopvaetio2n5(CTC.
=
..
+25C),
.......
.P.D.
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. . 105W
0.7W/C
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Avalanche Current, Repetitive or NonRepetitive (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mJ
Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mJ
Avalanche Current, Repetitive or NonRepetitive (Note 4), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
DrainSource Voltage (VGS = 0), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
DrainGate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +175C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300C
Thermal Resistance:
TMyapxicimaluCmaJsuenctotioSnintko(MCaosuen,tiRngthJsCur.fa. c. e.
....
flat,
........
smooth,
....
and
.........
greased),
Maximum JunctiontoAmbient (Free Air Operation), RthJA . . . . . . . .
.....
R. .th.C.S.
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1.43C/W
. 0.5C/W
62.5C/W
Note 1. Pulse width limited by safe operating area.
Note 2. Pulse width limited by TJ max, Duty Cycle < 1%.
Note 3. VDD = 25V, ID = IAR, Starting TJ = +175C.
Note 4. TC = +100C, Pulse width limited by TJ max, Duty Cycle < 1%.
Rev. 1013



NTE2987
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF
DrainSource Breakdown Voltage
DraintoSource Leakage Current
GateSource Leakage Forward
GateSource Leakage Reverse
ON (Note 5)
BVDSS
IDSS
IGSS
IGSS
VGS = 0v, ID = 250A
VDS = 100V, VGS = 0
VDS = 80V, VGS = 0V, , TC = +150C
VGS = 15V
VGS = 15V
Gate Threshold Voltage
Static DrainSource ON Resistance
OnState Drain Current
Dynamic
VGS(th)
RDS(on)
ID(on)
VDS = VGS, ID = 250A
VGS = 5V, ID = 10A
VDS > ID(on) x RDS(on)max, VGS = 10V
Forward Transconductance
gfs VNDoSte>5ID(on) x RDS(on)max, ID = 10A,
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Total Gate Charge
Qg VGS = 5V, ID = 20A, VDD = 80V
GateSource Charge
Qgs
GateDrain (“Miller”) Charge
Qgd
TurnOn Delay Time
Rise Time
td(on)
tr
VVDGDS
=
=
53V0V,
ID
=
10A,
RG
=
50,
TurnOff Delay Time
Fall Time
td(off)
tf
VVDGDS
=
=
58V0V,
ID
=
20A,
RG
=
50,
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
IS
ISM
VSD
trr
Qrr
IRRM
(Body Diode)
(Body Diode) Note 1
ISD = 20A, VGS = 0V, Note 5
TdiJ/d=t +=115000AC/,VsDD = 50V, ISD = 20A,
Note 1. Pulse width limited by safe operating area.
Note 5. Pulse Test: Pulse Width = 300s, Duty Cycle = 1.5%.
Min Typ Max Unit
100 − − V
−−
1 A
− − 10 A
− − 100 nA
− − −100 nA
1.0 1.6 2.5
0.09 0.12
20 − −
V
A
10 16 mhos
1200 1500 pF
250 350 pF
60 90 pF
22 30 nC
6
nC
12 nC
50 70 ns
140 200 ns
80 110 ns
80 110 ns
− − 20 A
− − 80 A
− − 1.5 V
130 ns
0.4 C
6 A







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