N-Channel MOSFET. NTE2989 Datasheet

NTE2989 MOSFET. Datasheet pdf. Equivalent

Part NTE2989
Description N-Channel MOSFET
Feature NTE2989 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Features.
Manufacture NTE
Datasheet
Download NTE2989 Datasheet



NTE2989
NTE2989
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Full Pack Type Package
Features:
D High Speed Switching
D Low OnResistance
D No Secondary Breakdown
D Low Driving Power
D High Voltage
D Repetitive Avalanche Rated
D
G
Applications:
D Switching Regulators
D UPS
D DCDC Converters
D General Purpose Power Amplifier
S
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
DrainSource Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Drain CCuornretinntu, oIDus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Avalanche Current, Repetitive or NonRepetitive (Tch +150C), IAR . . . . . . . . . . . . . . . . . . . . . 10A
Avalanche Energy, EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64.7mJ
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
V(BR)DSS ID = 1mA, VGS = 0V
600 − − V
VGS(th) ID = 1mA, VDS = VGS
3.5 4.0 4.5 V
IDSS
VVDGSS
=
=
600V,
0V
Tch = +25C
Tch = +125C
10 500 A
0.2 1.0 mA
Rev. 1013



NTE2989
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
GateSource Leakage Current
DrainSource OnState Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
IGSS
RDS(on)
gfs
Ciss
Coss
VGS = 30V, VDS = 0V
ID = 4.5A, VGS = 10V
ID = 5A, VDS = 25V
VDS = 25V, VGS = 0V, f = 1MHz
3
Reverse Transfer Capacitance
TurnOn Time,
(ton = td(on)
+tontr)
TurnOff Time,
(toff = td(off)
+toftff)
Avalanche Capability
Diode Forward OnVoltage
Reverse Recovery Time
Reverse Recovery Charge
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
VRCGCS
=
=
300V,
10
ID
=
10A,
VGS
=
10V,
L = 100H, Tch = +25C
IF = 2 x IDR, VGS = 0V, Tch = +25C
IFd=IF/IdDtR=, V1G0S0A=/0sV,, Tch = +25C
10
Typ
10
0.85
6
1100
170
74
25
70
75
40
1.0
500
6.5
Max
100
1.0
1700
260
120
40
110
120
60
1.5
Unit
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
C
.114 (2.9)
.181 (4.6).126 (3.2) Dia Max
Max .405 (10.3)
Max
.252
(6.4)
Isol
.622
(15.0)
Max
.118
(3.0)
Max
.531
(13.5)
Min
G DS
.098 (2.5)
.100 (2.54)







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