Small-Signal Transistor. BSS101 Datasheet

BSS101 Transistor. Datasheet pdf. Equivalent

Part BSS101
Description SIPMOS Small-Signal Transistor
Feature BSS 101 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = .
Manufacture Siemens Semiconductor
Datasheet
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BSS101
BSS 101
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V
Type
BSS 101
Type
BSS 101
BSS 101
VDS
240 V
ID
0.13 A
Ordering Code
Q62702-S493
Q62702-S636
Pin 1
S
Pin 2
G
RDS(on)
16
Package
TO-92
Tape and Reel Information
E6288
E6325
Marking
SS 101
Pin 3
D
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 k
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
TA = 33 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
Vgs
ID
IDpuls
Ptot
Values
240
240
± 14
± 20
0.13
0.52
0.63
Unit
V
A
W
Semiconductor Group
1
12/05/1997



BSS101
BSS 101
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Tj
Tstg
RthJA
Values
Unit
-55 ... + 150 °C
-55 ... + 150
200
K/W
E
55 / 150 / 56
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 240 V, VGS = 0 V, Tj = 25 °C
VDS = 240 V, VGS = 0 V, Tj = 125 °C
VDS = 130 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 0.13 A
VGS = 4.5 V, ID = 0.13 A
V(BR)DSS
240
VGS(th)
0.8
IDSS
-
-
-
IGSS
-
RDS(on)
-
-
-
1.4
0.1
2
-
1
12
15
-
2
1
60
30
10
16
26
Unit
V
µA
nA
nA
Semiconductor Group
2
12/05/1997





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