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NPN Transistor. 2SC536 Datasheet

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NPN Transistor. 2SC536 Datasheet






2SC536 Transistor. Datasheet pdf. Equivalent




2SC536 Transistor. Datasheet pdf. Equivalent





Part

2SC536

Description

NPN Transistor



Feature


2SC536 2SC536 FEATURES Power dissipatio n PCM: TRANSISTOR (NPN) TO-92 1. EMI TTER 400 mW (Tamb=25℃) 2. COLLECTOR 3. BASE 1 2 3 Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction te mperature range TJ, Tstg: -55℃ to +15 0℃ ELECTRICAL CHARACTERISTICS (Tamb=2 5℃ Parameter Collector-base breakdown voltage Collector-emitter.
Manufacture

WEJ

Datasheet
Download 2SC536 Datasheet


WEJ 2SC536

2SC536; breakdown voltage Emitter-Base breakdow n voltage Collector cut-off current Emi tter cut-off current DC current gain Co llector-emitter saturation voltage Tran sition frequency Collector output capac itance Symbol V(BR)CBO V(BR)CEO V(BR)EB O ICBO IEBO hFE VCE(sat) fT Cob unless otherwise specified) Test conditions M IN 40 30 5 1 1 60 960 0.5 100 3.5 V MHz pF TYP MAX UNIT .


WEJ 2SC536

Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, IC=0 VCB=35V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=6V, f=1MHz V V V µA µA CLASSIFI CATION OF hFE Rank Range D 60-120 E 100 -200 F 160-320 G 280-560 H 480-960 WEJ ELECTRONIC CO. Http:// www.wej.cn E- mail:wej@yongerjia.com .


WEJ 2SC536

.

Part

2SC536

Description

NPN Transistor



Feature


2SC536 2SC536 FEATURES Power dissipatio n PCM: TRANSISTOR (NPN) TO-92 1. EMI TTER 400 mW (Tamb=25℃) 2. COLLECTOR 3. BASE 1 2 3 Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction te mperature range TJ, Tstg: -55℃ to +15 0℃ ELECTRICAL CHARACTERISTICS (Tamb=2 5℃ Parameter Collector-base breakdown voltage Collector-emitter.
Manufacture

WEJ

Datasheet
Download 2SC536 Datasheet




 2SC536
2SC536
2SC536 TRANSISTOR (NPN)
FEATURES
TO-92
Power dissipation
PCM:
400 mW (Tamb=25)
Collector current
ICM: 100 mA
Collector-base voltage
V(BR)CBO:
40 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
Ic=100µA, IE=0
Ic=1mA, IB=0
40
30
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IEBO
IE=100µA, IC=0
VCB=35V, IE=0
VEB=4V, IC=0
5
DC current gain
Collector-emitter saturation voltage
Transition frequency
hFE
VCE(sat)
fT
VCE=6V, IC=1mA
IC=50mA, IB=5mA
VCE=6V, IC=1mA
60
100
Collector output capacitance
Cob VCE=6V, f=1MHz
3.5
MAX UNIT
V
V
V
1 µA
1 µA
960
0.5 V
MHz
pF
CLASSIFICATION OF hFE
Rank
D
Range
60-120
E
100-200
F
160-320
G
280-560
H
480-960
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com











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