2SD2642 Transistor Datasheet

2SD2642 Datasheet PDF, Equivalent


Part Number

2SD2642

Description

Silicon NPN Transistor

Manufacture

Sanken Electric

Total Page 1 Pages
PDF Download
Download 2SD2642 Datasheet PDF


2SD2642
2SD2642Darlington
Equivalent circuit
B
C
(70)
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)
Application : Audio, Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
110
110
5
6
1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Symbol
ICBO
IEBO
.V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=110V
VEB=5V
IC=30mA
VCE=4V, IC=5A
IC=5A, IB=5mA
IC=5A, IB=5mA
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
Ratings
100max
100max
110min
5000min
2.5max
3.0max
60typ
55typ
Unit
µA
µA
V
V
V
MHz
pF
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2
ton tstg
tf
(V) () (A) (V) (V) (mA) (mA) (µs) (µs) (µs)
30 6
5 10 –5 5 –5 0.8typ 6.2typ 1.1typ
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45
+0.2
-0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
BCE
a. Part No.
b. Lot No.
I C– V CE Characteristics (Typical)
6
0.5mA
0.4mA
0.3mA
4
0.2mA
2
IB=0.1mA
0
02 4 6
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
2
IC=5A
1
IC=3A
0
0.1
0.5 1
5 10
Base Current IB(mA)
50 100
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
6
4
2
0
0 1 2 2.5
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
50000
(VCE=4V)
10000
5000
h FE– I C Temperature Characteristics (Typical)
50000
(VCE=4V)
125˚C
10000
5000 25˚C
–30˚C
1000 1000
500 500
θ j-a– t Characteristics
4
1
0.5
100
0.01
0.1 0.5 1
Collector Current IC(A)
100
5 6 0.01
0.1 0.5 1
Collector Current IC(A)
0.3
56 1
5 10
50 100
Time t(ms)
500 1000
f T– I E Characteristics (Typical)
(VCE=12V)
m80
oTyp
.c60
et4u40
she20
ata0
www.d–0.02
–0.1
–1
Emitter Current IE(A)
–6
Safe Operating Area (Single Pulse)
30
10
5 DC 1001m0ms s
1
0.5
0.1
0.05
3
Without Heatsink
Natural Cooling
5 10
50 100
Collector-Emitter Voltage VCE(V)
200
Pc–Ta Derating
30
20
10
Without Heatsink
2
0
0 25 50 75 100 125
Ambient Temperature Ta(˚C)
150
161


Features Equivalent circuit C Darlington 2SD26 42 sElectrical Characteristics Symbol I CBO IEBO Conditions VCB=110V VEB=5V IC= 30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f= 1MHz Ratings 100max 100max 110min 5000m in∗ 2.5max 3.0max 60typ 55typ V V 13. 0min B (7 0 Ω ) E Silicon NPN Tri ple Diffused Planar Transistor (Complem ent to type 2SB1687) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEB O IC IB PC Tj Tstg Ratings 110 110 5 6 1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio , Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions FM 20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA 16.9±0.3 . V(BR)CEO hFE VCE(sat) VBE(sat) fT COB V 8.4±0.2 µA MHz pF 1.35±0.15 1.35±0.15 0.8 5 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0. 2 2.4±0.2 ∗hFE Rank O(5000 to 12000 ), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Co mmon Emitter) VCC (V) 30 RL (Ω) 6 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 5 IB2 (mA) –5.
Keywords 2SD2642, datasheet, pdf, Sanken Electric, Silicon, NPN, Transistor, SD2642, D2642, 2642, 2SD264, 2SD26, 2SD2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)