N-Channel MOSFET. 2SK3316 Datasheet

2SK3316 MOSFET. Datasheet pdf. Equivalent

Part 2SK3316
Description N-Channel MOSFET
Feature 2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3316 Switching Regul.
Manufacture Toshiba Semiconductor
Total Page 6 Pages
Datasheet
Download 2SK3316 Datasheet



2SK3316
2SK3316
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3316
Switching Regulator Applications
Fast reverse recovery time
: trr = 60 ns (typ.)
Built-in high-speed free-wheeling diode
Low drainsource ON resistance : RDS (ON) = 1.6 (typ.)
High forward transfer admittance : |Yfs| = 3.8 S (typ.)
Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
500
±30
5
20
35
180
5
3.5
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
3.57
62.5
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2004-07-06



2SK3316
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±100 µA, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
2SK3316
Min Typ. Max Unit
— — ±10
±30 —
— — 100
500 —
2.0 — 4.0
— 1.6 1.8
2.5 3.8 —
— 780 —
— 60 —
— 200 —
µA
V
µA
V
V
S
pF
— 12 —
Switching time
Turnon time
Fall time
ton
tf
— 25 —
ns
— 15 —
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 5 A
Qgd
— 60 —
— 17 —
— 11 — nC
—6—
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
Min
——
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V, dIDR / dt = 100 A / µs
Typ. Max Unit
—5
A
— 20
A
1.7
V
60 — ns
0.1 — µC
Marking
K3316
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2004-07-06





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