POWER MOSFET. MRF151 Datasheet

MRF151 MOSFET. Datasheet pdf. Equivalent


Part MRF151
Description N-CHANNEL BROADBAND RF POWER MOSFET
Feature ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by .
Manufacture Motorola
Datasheet
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( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL MRF151 Datasheet
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MRF151
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.
Guaranteed Performance at 30 MHz, 50 V:
Output Power — 150 W
Gain — 18 dB (22 dB Typ)
Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
Output Power — 150 W
Gain — 13 dB
Low Thermal Resistance
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
D
Order this document
by MRF151/D
MRF151
150 W, 50 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
G
S CASE 211–11, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Value
125
125
± 40
16
300
1.71
– 65 to +150
200
Max
0.6
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
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MRF151
1



MRF151
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
V(BR)DSS
125
— Vdc
IDSS
— 5.0 mAdc
IGSS
— 1.0 µAdc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
1.0
3.0
5.0 Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A)
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
VDS(on)
1.0
3.0
5.0 Vdc
gfs 5.0 7.0 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
Coss
— 350 —
— 220 —
pF
pF
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Crss
15
pF
FUNCTIONAL TESTS
Common Source Amplifier Power Gain, f = 30; 30.001 MHz
Gps 18 22 — dB
(VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 175 MHz
— 13 —
Drain Efficiency
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
ID (Max) = 3.75 A)
η 40 45 — %
Intermodulation Distortion (1)
(VDD = 50 V, Pout = 150 W (PEP), f = 30 MHz,
f2 = 30.001 MHz, IDQ = 250 mA)
Load Mismatch
(VDD = 50 V, Pout = 150 W (PEP), f1 = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
IMD(d3)
IMD(d11)
ψ
dB
— – 32 – 30
— – 60 —
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 3.0 A)
GPS — 23 —
IMD(d3)
– 50
IMD(d9 – 13)
– 75
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
dB
BIAS +
0 – 12 V
RF
INPUT
L1
C5 C6 C7
R1 D.U.T.
T1 R3 C2
C1
R2
T2
C3
C8 L2
C4
+
C9 C10
+
50 V
RF
OUTPUT
C1 — 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or
Monolythic with Short Leads
C3 — 200 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C4 — 15 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 — 10 µF/100 V Electrolytic
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 /1.0 W Carbon
R3 — 3.3 /1.0 W Carbon (or 2.0 x 6.8 /1/2 W in Parallel)
T1 — 9:1 Broadband Transformer
T2 — 1:9 Broadband Transformer
Board Material — 0.062Fiberglass (G10),
1 oz. Copper Clad, 2 Sides, er = 5
Figure 1. 30 MHz Test Circuit
MRF151
2
MOTOROLA RF DEVICE DATA





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