POWER FET. MRF158 Datasheet

MRF158 FET. Datasheet pdf. Equivalent

Part MRF158
Description TMOS BROADBAND RF POWER FET
Feature ( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL DATA Order this document by MRF158/D .
Manufacture Tyco Electronics
Datasheet
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MRF158
( DataSheet : www.DataSheet4U.com )
SEMICONDUCTOR TECHNICAL DATA
The RF TMOSLine
Power Field Effect Transistor
N–Channel Enhancement Mode
Designed for wideband large–signal amplifier and oscillator applications to
500 MHz.
Guaranteed 28 Volt, 500 MHz Performance
Output Power = 2.0 Watts
Minimum Gain = 16 dB (Min)
Efficiency = 55% (Typ)
Facilitates Manual Gain Control, ALC and Modulation
Techniques
100% Tested for Load Mismatch at All Phase Angles with
30:1 VSWR
Excellent Thermal Stability, Ideally Suited for Class A
Operation
Order this document
by MRF158/D
MRF158
To 500 MHz, 2 W, 28 V
TMOS
BROADBAND
RF POWER FET
D
G
S
CASE 305A–01, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Value
65
65
±20
0.5
8.0
45
– 65 to +150
200
Max
13.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
°C
Unit
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
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MRF158
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 1.0 mA)
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)
GateSource Leakage Current (VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage (ID = 10 mA, VDS = 10 V)
Forward Transconductance (VDS = 10 V, ID = 100 mA)
DYNAMIC CHARACTERISTICS
VGS(th)
gfs
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
FUNCTIONAL CHARACTERISTICS (Figure 1)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)
Drain Efficiency (Figure 1)
(VDD = 28 Vdc, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)
Electrical Ruggedness (Figure 1)
(VDD = 28 Vdc, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA,
VSWR 30:1 at all Phase Angles)
Gps
η
ψ
Series Equivalent Input Impedance
(VDD = 28 V, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)
Zin
Series Equivalent Output Impedance
(VDD = 28 V, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)
Zout
Min Typ Max Unit
65 — — Vdc
— — 0.5 mAdc
— — 1.0 µAdc
2.0 4.0 5.0 Vdc
80 110 mmhos
3.0 pF
4.0 pF
0.45 pF
16 18 dB
50 55 %
No Degradation in Output Power
5.9 j19.4
Ohms
14.5 j29 Ohms
REV 9
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