POWER FET. MRF158 Datasheet

MRF158 FET. Datasheet pdf. Equivalent

Part MRF158
Description TMOS BROADBAND RF POWER FET
Feature ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by .
Manufacture Motorola
Datasheet
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( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL MRF158 Datasheet
( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR MRF158 Datasheet
Recommendation Recommendation Datasheet MRF158 Datasheet




MRF158
( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF TMOS® Line
Power Field Effect Transistor
N–Channel Enhancement Mode
Designed for wideband large–signal amplifier and oscillator applications to
500 MHz.
Guaranteed 28 Volt, 500 MHz Performance
Output Power = 2.0 Watts
Minimum Gain = 16 dB (Min)
Efficiency = 55% (Typ)
Facilitates Manual Gain Control, ALC and Modulation
Techniques
100% Tested for Load Mismatch at All Phase Angles with
30:1 VSWR
Excellent Thermal Stability, Ideally Suited for Class A
Operation
Circuit board sample available upon request by
contacting RF Tactical Marketing in Tempe, AZ.
S–Parameters Available for Download into Frequency Domain Simulators.
See http://mot–sps.com/rf/designtds/
D
Order this document
by MRF158/D
MRF158
To 500 MHz, 2 W, 28 V
TMOS
BROADBAND
RF POWER FET
G
S
CASE 305A–01, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Value
65
65
±20
0.5
8.0
45
–65 to +150
200
Max
13.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
°C
Unit
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
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MRF158
1



MRF158
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 1.0 mA)
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)
Gate–Source Leakage Current (VGS = 20 V, VDS = 0)
ON CHARACTERISTICS
V(BR)DSS
IDSS
IGSS
Gate Threshold Voltage (ID = 10 mA, VDS = 10 V)
Forward Transconductance (VDS = 10 V, ID = 100 mA)
DYNAMIC CHARACTERISTICS
VGS(th)
gfs
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
FUNCTIONAL CHARACTERISTICS (Figure 1)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)
Drain Efficiency (Figure 1)
(VDD = 28 Vdc, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)
Electrical Ruggedness (Figure 1)
(VDD = 28 Vdc, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA,
VSWR 30:1 at all Phase Angles)
Gps
η
ψ
Series Equivalent Input Impedance
(VDD = 28 V, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)
Zin
Series Equivalent Output Impedance
(VDD = 28 V, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)
Zout
Min Typ Max Unit
65 — — Vdc
— — 0.5 mAdc
— — 1.0 µAdc
2.0 4.0 5.0 Vdc
80 110 — mmhos
— 3.0 — pF
— 4.0 — pF
— 0.45 — pF
16 18 — dB
50 55 — %
No Degradation in Output Power
— 5.9 – j19.4 —
Ohms
— 14.5 – j29 —
Ohms
MRF158
2
MOTOROLA RF DEVICE DATA





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