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IRG4BC30FD1

International Rectifier
Part Number IRG4BC30FD1
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jun 5, 2007
Detailed Description PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C Features • Fast: opti...
Datasheet PDF File IRG4BC30FD1 PDF File

IRG4BC30FD1
IRG4BC30FD1

Overview
PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C Features • Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
• IGBT co-packaged with Hyperfast FRED diodes for ultra low recovery characteristics.
• Industry standard TO-220AB package.
G E VCES = 600V VCE(on) typ.
= 1.
59V @VGE = 15V, IC = 17A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available.
• IGBT's optimized for specific application conditions.
• FRED diodes optimized for performance with IGBT's.
Minimiz...


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