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IRF620
Power MOSFET VDSS = 200V, RDS(on) = 0.80 ohm, ID = 5.2 A
D
G S
N Channel
Symbol
ELECTRICAL CHARACTERISICS at
Tj = 25 C Maximum. Unless stated Otherwise Symbol
Parameter
Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage
Test Conditions
VDS = 200VDC, VGS = ...
