2SC5071. C5071 Datasheet

C5071 2SC5071. Datasheet pdf. Equivalent

Part C5071
Description 2SC5071
Feature 2SC5071 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transis.
Manufacture Allegro Micro Systems
Total Page 1 Pages
Datasheet
Download C5071 Datasheet



C5071
2SC5071
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC5071
500
400
10
12(Pulse24)
4
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
Conditions
ICBO
VCB=500V
IEBO
VEB=10V
V(BR)CEO
IC=25mA
hFE VCE=4V, IC=7A
VCE(sat)
VBE(sat)
IC=7A, IB=1.4A
IC=7A, IB=1.4A
fT VCE=12V, IE=–1A
COB VCB=10V, f=1MHz
www.DataSheseTt4ypUi.ccaolmSwitching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
200 28.5 7 10 –5 0.7
IB2
(A)
–1.4
ton
(µs)
1.0max
(Ta=25°C)
2SC5071
100max
100max
400min
10 to 30
Unit
µA
µA
V
0.5max
1.3max
10typ
105typ
V
V
MHz
pF
tstg
(µs)
3.0max
tf
(µs)
0.5max
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
12
1A
10 800mA
600mA
8
400mA
6
200mA
4
IB=100mA
2
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
1
–55˚C (Case Temp)
25˚C (Case Temp)
125˚C (Case Temp)
VBE(sat)
VCE(sat)
125˚C
–55˚C
0
0.02 0.05 0.1
0.5 1
5 10
Collector Current IC(A)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
12
10
8
6
4
2
0
0 0.5 1.0
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
40
125˚C
(VCE=4V)
25˚C
–30˚C
10
8
0.02
0.05 0.1
0.5 1
Collector Current IC(A)
5 1012
t on• t stg• t f– I C Characteristics (Typical)
5
VCC 200V
IC:IB1:IB2=10:1:–2
1
tstg
0.5
tf
0.1
0.5
ton
15
Collector Current IC(A)
10 12
θ j-a– t Characteristics
3
1
0.5
0.3
1
10 100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
30
100µs
10
5
Reverse Bias Safe Operating Area
30
10
5
1
0.5 Without Heatsink
Natural Cooling
0.1
5
10 50 100
Collector-Emitter Voltage VCE(V)
124
500
1
Without Heatsink
0.5
Natural Cooling
L=3mH
IB2 =1.0A
Duty:less than 1%
0.1
5
10 50 100
Collector-Emitter Voltage VCE(V)
500
Pc–Ta Derating
100
50
Without Heatsink
3.5
0
0 25 50 75 100 125
Ambient Temperature Ta(˚C)
150





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)