POWER TRANSISTOR. 2SC5280 Datasheet

2SC5280 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC5280
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3P.
Manufacture SavantIC
Datasheet
Download 2SC5280 Datasheet

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2SC5280
SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(H)IS package
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·Low saturation voltage
·High speed
·Bult-in damper diode
APPLICATIONS
·High speed switching applications
·Horizontal deflection output for medium
resolution display,color TV
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SC5280
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Maximum absolute ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
600
5
8
16
4
50
150
-55~150
UNIT
V
V
V
A
A
A
W



2SC5280
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5280
CHARACTERISTICS
Tj=25 unless otherwise specified
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SYMBOL
PARAMETER
CONDITIONS
VCEsat
VBEsat
Collector-emitter saturation voltage IC=6A;IB=1.5 A
Base-emitter saturation voltage
IC=6A;IB=1.5 A
V(BR)EBO Emitter-base breakdown voltage
IE=400mA;IC=0
IEBO
ICBO
hFE-1
hFE-2
Emitter cut-off current
Collector cut-off current
DC current gain
DC current gain
VEB=5V; IC=0
VCB=1500V; IE=0
IC=1 A ; VCE=5V
IC=6A ; VCE=5V
fT Transition frequency
IE=0.1A ; VCE=10V
COB Collector output capacitance
VF Diode forward voltage
Switching times
IE=0 ; VCB=10V;f=1MHz
IF=6A
tstg Storage time
tf Fall time
ICP=6A;IB1(end)=1.2A
fH=31.5kHz
MIN TYP. MAX UNIT
5V
1.0 1.5
V
5V
72 250 mA
1 mA
10 35
4 8.5
2 MHz
115 pF
1.4 1.8
V
4 6 µs
0.2 0.5 µs
2





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