POWER TRANSISTOR. 2SD1265 Datasheet

2SD1265 TRANSISTOR. Datasheet pdf. Equivalent

2SD1265 Datasheet
Recommendation 2SD1265 Datasheet
Part 2SD1265
Description SILICON POWER TRANSISTOR
Feature 2SD1265; SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1265 2SD1265A www..
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Datasheet
Download 2SD1265 Datasheet




SavantIC 2SD1265
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1265 2SD1265A
DESCRIPTION
www.data·sWheietht4uT.cOom-220Fa package
·Low collector saturation voltage
·Wide area of safe operation
APPLICATIONS
·For audio frequency power applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SD1265
2SD1265A
Open emitter
VCEO
Collector-emitter voltage
2SD1265
2SD1265A
Open base
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current (DC)
Collector current-peak
Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
Open collector
TC=25
Ta=25
VALUE
60
80
60
80
8
4
6
1
30
2
150
-55~150
UNIT
V
V
V
A
A
A
W



SavantIC 2SD1265
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1265 2SD1265A
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2SD1265
2SD1265A
IC=0.2A , L=25mH
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A
VBE Base-emitter on voltage
IC=1A ; VCE=3V
ICBO Collector cut-off current
VCB=20V; IE=0
IEBO Emitter cut-off current
VEB=8V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=3V
hFE-2
DC current gain
IC=1A ; VCE=3V
MIN TYP. MAX UNIT
60
V
80
1.0 V
1.2 V
30 µA
1 mA
40
30 160
hFE-2 Classifications
QPO
30-60 500-100 80-160
2



SavantIC 2SD1265
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1265 2SD1265A
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3







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