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POWER TRANSISTOR. 2SD1274 Datasheet |
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1274 2SD1274A 2SD1274B
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20Fa package
·High VCBO
·High speed switching
APPLICATIONS
·Power amplifier applicaitons
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SD1274
VCBO
Collector-base voltage 2SD1274A Open emitter
2SD1274B
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current (DC)
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
Ta=25
VALUE
150
200
250
80
6
5
40
2
150
-55~150
UNIT
V
V
V
A
W
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1274 2SD1274A 2SD1274B
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A, L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=1mA, IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
VBE Base-emitter voltage
IC=5A ; VCE=4V
ICBO
Collector
cut-off current
2SD1274 VCB=150V; IE=0
2SD1274A VCB=200V; IE=0
2SD1274B VCB=250V; IE=0
IEBO Emitter cut-off current
hFE DC current gain
fT Transition frequency
tf Fall time
VEB=5V; IC=0
IC=5A ; VCE=4V
IC=0.5A ; VCE=10V
IC=5A ;IB1=0.8A VEB=-5V
MIN TYP. MAX UNIT
80 V
6V
1.6 V
1.5 V
1 mA
50 µA
14
40 MHz
1.0 µs
2
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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1274 2SD1274A 2SD1274B
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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