POWER TRANSISTOR. BUT11AF Datasheet


BUT11AF TRANSISTOR. Datasheet pdf. Equivalent


BUT11AF


SILICON POWER TRANSISTOR
SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors
DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION

BUT11F BUT11AF

Fig.1 simplified outline (TO-220Fa) and symbol

Absolute maximum ratings (Tc=25 )
SYMBOL VCBO PARAMETER Collector-base voltage BUT11F BUT11AF BUT11F BUT11AF CONDITIONS Open emitter VALUE 850 1000 400 450 9 5 10 2 4 TC=25 40 150 -65~150 UNIT V

VCEO VEBO IC ICM IB IBM Ptot Tj Tstg

Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature

Open base Open collector

V V A A A A W

THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 3.125 UNIT K/W

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BUT11F IC=0.1A; IB=0 BUT11AF BUT11F BUT11AF BUT11F BUT11AF BUT11F BUT11AF IC=3A; IB=0.6A CONDITIONS
www.datasheet4u.com

BUT11F BUT11AF

SYMBOL

MIN 400

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

V 450

VCEsat

Collector-emitter saturation voltage

1.5 IC=2.5A; IB=0.5A IC=3A; IB=0.6A 1.3 IC=2.5A; IB=0.5A VCE=8...



BUT11AF
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUT11F BUT11AF
DESCRIPTION
·With TO-220Fa package
www.dat·aHshigeeht4vuo.clotamge ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
BUT11F
BUT11AF
VCEO
BUT11F
Collector-emitter voltage
BUT11AF
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-peak
IB Base current
IBM Base current-peak
Ptot Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
VALUE
850
1000
400
450
9
5
10
2
4
40
150
-65~150
UNIT
V
V
V
A
A
A
A
W
VALUE
3.125
UNIT
K/W

BUT11AF
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BUT11F
BUT11AF
IC=0.1A; IB=0
VCEsat
Collector-emitter
saturation voltage
BUT11F IC=3A; IB=0.6A
BUT11AF IC=2.5A; IB=0.5A
VBEsat
Base-emitter
saturation voltage
BUT11F IC=3A; IB=0.6A
BUT11AF IC=2.5A; IB=0.5A
ICES
Collector
cut-off current
BUT11F VCE=850V ;VBE=0
BUT11AF VCE=1000V ;VBE=0
IEBO Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=5mA ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=5V
Switching times resistive load
ton Turn-on time
ts Storage time
tf Fall time
IC=2.5A; IB1=- IB2=0.5A
VCC=250V;RL=100B
Product Specification
BUT11F BUT11AF
MIN TYP. MAX UNIT
400
V
450
1.5 V
1.3 V
1.0 mA
10 mA
10 35
10 35
1.0 µs
4.0 µs
0.8 µs
2




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