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GT40Q323

Toshiba Semiconductor
Part Number GT40Q323
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published May 31, 2009
Detailed Description GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching...
Datasheet PDF File GT40Q323 PDF File

GT40Q323
GT40Q323

Overview
GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching Application www.
datasheet4u.
com Unit: mm • • • • • Enhancement-mode High speed: tf = 0.
14 μs (typ.
) (IC = 40A) FRD included between emitter and collector 4th generation TO-3P (N) (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±25 20 3...


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