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2SD2237

Part Number	2SD2237
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD...
Datasheet	2SD2237 PDF File

Overview

com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2237 DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= 2A ·Low Collector Saturation Voltage: VCE(sat) = 2.
0V(Max.
) @IC= 5A ·Complement to Type 2SB1478 APPLICATIONS ·Designed for power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w ww s c s .
i VALUE 100 V 100 V 5 V 8 A 60 W UNIT n c .
i m e VEBO Emitter-Base Voltage IC Collector Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature PC Tj 150 ℃ Tstg Storage Temperature Range -55...

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