Transistors
2SD2621
Silicon NPN epitaxial planar type
For low-frequency driver amplification
0.33+0.05 –0.02
Unit: mm
0.10+0.05 –0.02
■ Features
High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) High emitter-base voltage (Collector open) VEBO
3
0.15 min. 0.80±0.05 1.20±0.05
(0.40) (0.40)
■ Absolute Maximum ...
