Power Transistors
2SB1629
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
4.6±0.2
s Features
q q q
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat si...
