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TTA007

Toshiba Semiconductor
Part Number TTA007
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Dec 9, 2012
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type TTA007 TTA007 High-Speed Switching Applications DC-DC Converter Applicat...
Datasheet PDF File TTA007 PDF File

TTA007
TTA007

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type TTA007 TTA007 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain : hFE = 200 to 500 (IC = −0.
1 A) • Low collector-emitter saturation voltage : VCE(sat) = −0.
2 V (max) • High-speed switching : tf = 70 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −7 V Collector current DC IC Pulse ICP −1 A −2 Base current IB −0.
1 A t = 10 s PC Collector power dissipation 1.
1 W DC (Note 1) 0.
7 Junction temperature Tj 150 °C Storage temperature range...


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