Power Transistor. BUX80 Datasheet

BUX80 Transistor. Datasheet pdf. Equivalent


Part BUX80
Description High Power Transistor
Feature NPN BUX80 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR The BUX80 is silicon multiepitaxial planar.
Manufacture Comset Semiconductors
Datasheet
Download BUX80 Datasheet


BUX80 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s SGS-T BUX80 Datasheet
( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com BUX80 Datasheet
NPN BUX80 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR Th BUX80 Datasheet
isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Em BUX80 Datasheet
Recommendation Recommendation Datasheet BUX80 Datasheet




BUX80
NPN BUX80
HIGH CURRENT, HIGH SPEED, HIGH
POWER TRANSISTOR
The BUX80 is silicon multiepitaxial planar NPN transistor in Jedec TO-3.
They are intended for use in converters, inverters, switching regulators and motor control
systems applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCER
VEBO
VCES
IC
ICM
IB
Pt
TJ
TStg
Collector-Emitter Voltage
Collector- Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
RBE = 50
IC =www.DataSheet.net/
0
VBE = 0
tp = 10ms
@ TC = 40°
Value
400
500
10
800
10
15
5
100
150
-65 to +150
Unit
V
V
V
V
A
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
Thermal Resistance, Junction to Case
Value
1.1
Unit
°C/W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/



BUX80
NPN BUX80
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
VCEO(SUS)
VCER
IEBO
Collector-Emitter Sustaining
Voltage (*)
Collector-Emitter Sustaining
Voltage (*)
Emitter Cutoff Current
ICES Collector Cutoff Current
hFE
VCE(SAT)
VBE(SAT)
ton
DC Current Gain (*)
Collector-Emitter saturation
Voltage (*)
Base-Emitter saturation
Voltage (*)
Turn-on time
ts Storage time
tf File time
IC=100 mA
IC=100 mA
RBE = 50
VCE=10 V, IC=0
VCE= VCES, VBE= 0
VCE= VCES, VBE= 0
Tcase = 125°C
IC=1.2 A, VCE=5.0 V
IC=5 A, IB=1 A
IC=8 A, IB=2.5 A
IC=5 A, IB=1 A
IC=8 A, IB=2.5 A
IC=5 A, IB=1 A
www.DataSheet.net/
VCC=250 V
IC=5 A, VCC=250 V
IB1 =1A, -IB2 =2 A
IC=5 A, VCC=-250 V
IB1 =1A, -IB2 =2 A
400 -
500 -
--
--
--
- 30
--
--
--
--
--
--
--
-V
-V
10 mA
1
3 mA
--
1.5
3
1.4
V
1.8
0.5
3.5 µs
0.5
(*) Pulse Duration = 300 µs, Duty Cycle <= 1.5%
26/10/2012
COMSET SEMICONDUCTORS
2/3
Datasheet pdf - http://www.DataSheet4U.co.kr/







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)