power transistors. BUX84 Datasheet

BUX84 transistors. Datasheet pdf. Equivalent


Part BUX84
Description (BUX84 / BUX85) Silicon diffused power transistors
Feature NPN BUX84 – BUX85 SILCON DIFFUSED POWER TRANSISTORS The BUX84-BUX85 are NPN transistors mounted in J.
Manufacture Comset Semiconductors
Datasheet
Download BUX84 Datasheet


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BUX84
NPN BUX84 – BUX85
SILCON DIFFUSED POWER TRANSISTORS
The BUX84-BUX85 are NPN transistors mounted in Jedec TO-220 plastic package.
They are designed for high voltage, high speed power switching applications like converters,
inverters, switching regulators, motor control systems.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCESM
IC
IB
IBM
-IBM
PD
TJ
TStg
Collector-Emitter Voltage
Collector-Emitter Voltage (open base)
Collector Current
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IC
ICM
Base Current
Base Current (peak value)
Reverse Base Current (peak value) (1)
Total Device Dissipation
Junction Temperature
@ TC = 50°
Storage Temperature range
THERMAL CHARACTERISTICS
Value
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
400
450
800
1000
2
3
0.75
1
1
40
150
-65 to +150
Symbol
Ratings
RthJ-a
RthJ-mb
Thermal Resistance, Junction to mounting base
Thermal Resistance, Junction to ambient in free air
Value
70
2.5
Unit
V
V
A
A
A
A
A
Watts
°C
°C
Unit
K/W
K/W
COMSET SEMICONDUCTORS
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Datasheet pdf - http://www.DataSheet4U.co.kr/



BUX84
NPN BUX84 – BUX85
ELECTRICAL CHARACTERISTICS (3)
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCEM= VCESmax
VBE=0V
BUX84
BUX85
-
- 0.2
ICES Collector Cutoff Current(2) VCEM= VCESmax BUX84
mA
VBE=0V
- - 1.5
Tj =125° C
BUX85
IEBO
Emitter Cutoff Current
VBE=5.0 V, IC=0
BUX84
BUX85
-
-
1 mA
VCEOsust
Collector-Emitter sustaining IC=100 mA, IBoff= 0 BUX84 400
Voltage
L=25mH
BUX85 450
-
-
-
-
V
hFE DC Current Gain
IC=0.1 A, VCE=5 V
BUX84
BUX85
30
50
-
-
VCE(SAT)
Collector-Emitter saturation
Voltage
I =0.3 A, I =30 mAC
Bwww.DataSheet.net/
IC=1 A, IB=0.2A
BUX84
BUX85
BUX84
BUX85
-
-
- 0.8
- 1V
VBE(SAT)
Base-Emitter saturation
Voltage
IC=1 A, IB=0.2 A
BUX84
BUX85
-
- 1.1
fT
Transition frequency
IC=0.5 A, VCE=10 V BUX84
f= 1MHz
BUX85
4
20
- MHz
ton Turn-on time
TS Storage time
Tf Fall Time
Tf Fall Time
IC=1 A, VCC=250 V
IB1=0.2A, IB2=0.4A
IC=1 A, VCC=250 V
IB1=0.2A, IB2=0.4
IC=1 A, VCC=250 V
IB1=0.2A, IB2=0.4
IC=1 A, VCC=250 V
IB1=0.2A, IB2=0.4
TC=95°
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
-
-
-
-
0.3 0.5
2 3.5
0.4 -
µs
- 1.4
(1) Turn off current
(2) Measured with a half-sinewave (curve tracer)
(3)Puls test : PW =300µs, Duty Cycle< 2%
26/10/2012
COMSET SEMICONDUCTORS
3/3
Datasheet pdf - http://www.DataSheet4U.co.kr/







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