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TTC007

NPN Transistor

Description

TOSHIBA Transistor Silicon NPN Epitaxial Type TTC007 High-Speed Switching Applications DC-DC Converter Applications High DC current gain: hFE = 400 to1000 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE(sat) = 0.12 V (max) High-speed switching : tf = 85 ns (typ.) TTC007 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol...

Toshiba

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