(PDF) 2SD1817 Datasheet PDF | Kexin





2SD1817 Datasheet PDF

Part Number 2SD1817
Description NPN Epitaxial Planar Silicon Transistor
Manufacture Kexin
Total Page 1 Pages
PDF Download Download 2SD1817 Datasheet PDF

Features: Datasheet pdf SMD Type Transistors NPN Epitaxial Plan ar Silicon Transistor 2SD1817 TO-252 +0 .15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50 -0.7 +0.1 -0.1 Features High DC curren t gain. +0.2 9.70 -0.2 6.50 +0.2 5.30- 0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max Electrical Conne ction 2.3 +0.15 4.60-0.15 +0.1 0.60-0 .1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 + 0.15 5.55 -0.15 1 Base 2 Collector 3 E mitter Absolute Maximum Ratings Ta = 2 5 Parameter Collector-base voltage Coll ector-emitter voltage Emitter-base volt age Collector current Collector current (pulse) Collector dissipation Ta = 25 Jumction temperature Storage temperatur e Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 80 60 6 3 6 1 15 150 -55 to + 150 Unit V V V A A W W Electrical Char acteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Collector-emitter satur ation voltage Base-to-emitter saturatio n voltage Collector-to-base breakdown v oltage Collector-to-emitter breakdown voltage Symbol ICBO IEBO .

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2SD1817 datasheet
SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SD1817
Features
High DC current gain.
Electrical Connection
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Ta = 25
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Collector-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
80
60
6
3
6
1
15
150
-55 to +150
Unit
V
V
V
A
A
W
W
Symbol
Testconditons
ICBO VCB = 60V , IE = 0
IEBO VEB = 5V , IC = 0
VCE = 2V , IC = 1A
hFE
VCE = 2V , IC = 2A
VCE(sat) IC = 2A , IB = 4mA
VBE(sat) IC = 2A , IB = 4mA
V(BR)CBO IC = 1mA , IE = 0
V(BR)CEO IC = 25mA , RBE =
Min Typ Max Unit
10 ├ČA
2.5 mA
2000
1000
1.5 V
2.0 V
80 V
60 V
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