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GT30J122A

Toshiba
Part Number GT30J122A
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Jan 6, 2014
Detailed Description Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Appli...
Datasheet PDF File GT30J122A PDF File

GT30J122A
GT30J122A

Overview
Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1.
Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction (PFC) Applications Note: The product(s) described herein should not be used for any other application.
2.
Features (1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.
20 µs (typ.
) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.
7 V (typ.
) (IC = 50 A) 3.
Packaging and Internal Circuit GT30J122A TO-3P(N) 1 : Gate 2 : Collector 3 : Emitter Start of commercial production 2010-06 1 2014-01-07 Rev.
2.
0 GT30J122A 4.
Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specif...


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