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N-Channel MOSFET. 2SK3911 Datasheet

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N-Channel MOSFET. 2SK3911 Datasheet







2SK3911 MOSFET. Datasheet pdf. Equivalent




2SK3911 MOSFET. Datasheet pdf. Equivalent





Part

2SK3911

Description

N-Channel MOSFET

Manufacture

Toshiba

Datasheet
Download 2SK3911 Datasheet


Toshiba 2SK3911

2SK3911; 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-M OSVI) 2SK3911 Switching Regulator Appl ications Unit: mm • Small gate char ge: Qg = 60 nC (typ.) • Low drain-sou rce ON resistance: RDS (ON) = 0.22 Ω (typ.) • High forward transfer admitt ance: |Yfs| = 11 S (typ.) • Low leaka ge current: IDSS = 500 μA (VDS = 600 V ) • Enhancement model: Vth = 2.


Toshiba 2SK3911

.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs olute Maximum Ratings (Ta = 25°C) Cha racteristic Symbol Rating Unit Drai n-source voltage Drain-gate voltage (RG S = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Dr ain power dissipation (Tc = 25°C) Sin gle pulse avalanche energy (Note 2) Av alanche current Repetitive avalanche e nergy (Note 3) Chann.


Toshiba 2SK3911

el temperature Storage temperature rang e VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 600 V 600 V ±30 V 20 A 80 150 W 792 mJ 20 A 15 mJ 1 50 °C -55 to 150 °C 1. GATE 2. DR AIN (HEATSINK) 3. SOURCE JEDEC ― J EITA SC-65 TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/cu.



Part

2SK3911

Description

N-Channel MOSFET

Manufacture

Toshiba

Datasheet
Download 2SK3911 Datasheet




 2SK3911
2SK3911
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI)
2SK3911
Switching Regulator Applications
Unit: mm
Small gate charge: Qg = 60 nC (typ.)
Low drain-source ON resistance: RDS (ON) = 0.22 (typ.)
High forward transfer admittance: |Yfs| = 11 S (typ.)
Low leakage current: IDSS = 500 μA (VDS = 600 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
V
600
V
±30
V
20
A
80
150
W
792
mJ
20
A
15
mJ
150
°C
-55 to 150
°C
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
2
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during
use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.46 mH, IAR = 20 A, RG = 25 Ω
1
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1
2009-09-29





 2SK3911
2SK3911
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Gate-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
V (BR) GSS IG = ±10 μA, VDS = 0 V
±30
V
IDSS
VDS = 600 V, VGS = 0 V
500
μA
V (BR) DSS ID = 10 mA, VGS = 0 V
600
V
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
RDS (ON) VGS = 10 V, ID = 10 A
0.22 0.32 Ω
Yfs
VDS = 10 V, ID = 10 A
3.0
11
S
Ciss
4250
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
10
pF
Coss
420
tr
10 V
VGS
ID = 10 A VOUT
12
0V
ton
4.7 Ω
RL =
45
20 Ω
ns
tf
12
VDD 200 V
toff
Duty 1%, tw = 10 μs
80
Qg
Qgs
VDD 400 V, VGS = 10 V, ID = 20 A
Qgd
60
50
nC
10
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 20 A, VGS = 0 V
IDR = 20 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
20
A
80
A
1.7
V
1350
ns
24
μC
Marking
TOSHIBA
K3911
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Part No. (or abbreviation code)
Lot No.
Note 4
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29





 2SK3911
ID – VDS
20
10
COMMON
SOURCE
8
6.5
Tc = 25°C
16
Pulse test
7
6
12
8
5.5
4
VGS = 5 V
0
0
2
4
6
8
10
DRAINSOURCE VOLTAGE VDS (V)
2SK3911
ID – VDS
50
COMMON SOURCE
Tc = 25°C
10
8
PULSE TEST
40
7
30
20
6.5
6
10
5.5
VGS = 5 V
0
0
4
8
12
16
20
DRAINSOURCE VOLTAGE VDS (V)
ID – VGS
50
COMMON SOURCE
VDS = 20 V
PULSE TEST
40
25
30
100
Tc = −55°C
20
10
0
0
2
4
6
8
10
GATESOURCE VOLTAGE VGS (V)
VDS – VGS
20
COMMON SOURCE
Tc = 25°C
PULSE TEST
16
12
8
4
5
ID = 20 A
10
0
0
4
8
12
16
20
GATESOURCE VOLTAGE VGS (V)
Yfs⎪ − ID
100
COMMON SOURCE
VDS = 20 V
PULSE TEST
10
Tc = −55°C
100
25
1
1000
RDS (ON) ID
COMMON SOURCE
Tc = 25°C
PULSE TEST
VGS = 10 V
100
0.1
0.1
1
10
100
DRAIN CURRENT ID (A)
10
1
10
100
DRAIN CURRENT ID (A)
3
2009-09-29



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