S9011 Transistor Datasheet

S9011 Datasheet, PDF, Equivalent


Part Number

S9011

Description

NPN Transistor

Manufacture

WEJ

Total Page 1 Pages
Datasheet
Download S9011 Datasheet


S9011
RoHS
S9011
S9011 TRANSISTOR (NPN)
DF EATURE
Pow er dissipation
TP CM:
0 .31 W (Tamb=25)
.,LCo llector current
I CM: 0 .03
C ollector-base voltage
A
OV (BR)CBO:
30 V
Operating and storage junction temperature range
CTj, Tstg: - 55to +150
TO-92
1 . EMITTER
2. BASE
3. COLLECTOR
123
ICE LECTRICAL CH ARACTERISTICS (Tamb=25u nless o therwise sp ecified)
P arameter
NCollector-base breakdown voltage
OCollector-emitter breakdown voltage
Emitter-base breakdown voltage
RCollector cut-off current
TCollector cut-off current
CEmitter cut-off current
EDC current gain
LCollector-emitter saturation voltage
EBase-emitter voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO V
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
Test conditions
Ic= 100µA, IE=0 30
IC= 0.1mA , IB=0 20
IE= 100µA, IC=0 4
CB=16V, IE=0
VCB=16V, IE=0
VEB= 3.5V, IC=0
VCE=5V, IC=1mA 28
IC= 10 mA, IB= 1mA
IC= 10 mA, IB= 1mA
MIN
TYP MAX UNIT
V
V
V
0.1 µA
0.1 µA
0.1 µA
270
0.3 V
1V
JTransition frequency
VCE=5V, IC=1mA,
fT
f=30MHz
150
MHz
WECLASSIFICATION OF hFE(1)
Rank D
E F G H IJ
Range
28-45 39-
60 54-
80
72-108
97-146
132-198
180-270
WEJ ELECTRONIC CO.
Http:// www.wej.cn E-mail:wej@yongerjia.com
http://www.Datasheet4U.com


Features RoHS S9011 S9011 F EATURE Pow er dissip ation P CM: TRANSISTOR (NPN) TO-92 1 . EMITTER 2. BASE 0 .31 W (Tamb=25℃ ) 3. COLLECTOR Co llector current I C M: 0 .03 A C ollector-base voltage V (B R)CBO: 30 V Operating and storage junct ion temperature range Tj, Tstg: - 55℃ to +150℃ E LECTRICAL CH ARACTERISTI CS (Tamb=25℃ u nless o therwise sp ec ified) P arameter Symbol V(BR)CBO V(BR) CEO V(BR)EBO ICBO V ICBO Test Collecto r-base breakdown voltage Collector-emit ter breakdown voltage Emitter-base brea kdown voltage Collector cut-off current Collector cut-off current Emitter cut- off current DC current gain Collector- emitter saturation voltage Base-emitter voltage W Transition frequency CLAS SIFICATION OF hFE(1) Rank D 28-45 39E 6 0 54F 80 G 72-108 H 97-146 I 132-198 J 180-270 J E E C E L R T Ic= 100µA , IE=0 30 IC= 0.1mA , IB=0 20 IE= 100 A, IC=0 4 CB=16V, IE=0 O conditions IC N C L , . O 1 2 3 D T MIN TYP MAX UNIT V V V 0.1 0.1 0.1 270 0.3 1 µA µA µA VCB=16V, IE=0 IEBO V.
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