Power MOSFET. IRF540 Datasheet

IRF540 MOSFET. Datasheet pdf. Equivalent


Vishay IRF540
Power MOSFET
IRF540, SiHF540
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 10 V
72
11
32
Single
0.077
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
•F ast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combi nation of fast swi tching,
ruggedized device des ign, low on -resistance a nd
cost-effectiveness.
The TO-220AB package is univers ally preferred for all
commercial-industrial app lications at powe r dissipation
levels to approximately 50 W. The low thermal resistance
and low package c ost of th e TO- 220AB con tribute to its
wide acceptance throughout the industry.
TO-220AB
IRF540PbF
SiHF540-E3
IRF540
SiHF540
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER S
YMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS ±
ID
IDM 110
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt 5.5
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 440 μH, Rg = 25 , IAS = 28 A (see fig. 12).
c. ISD 28 A, dI/dt 170 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
LIMIT
100
20
28
20
1.0
230
28
15
150
- 55 to + 175
300d
10 lbf
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
· in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91021
S11-0510-Rev. B, 21-Mar-11
www
.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com


IRF540 Datasheet
Recommendation IRF540 Datasheet
Part IRF540
Description Power MOSFET
Feature IRF540; IRF540, SiHF540 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qg.
Manufacture Vishay
Datasheet
Download IRF540 Datasheet




Vishay IRF540
IRF540, SiHF540
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMB
OL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on) V
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
GS = 10 V
ID = 17 Ab
VDS = 50 V, ID = 17 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss -
Crss -
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs --
Qgd --
VGS = 10 V
ID = 17 A, VDS = 80 V,
see fig. 6 and 13b
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off) -5
tf -4
VDD = 50 V, ID = 17 A
Rg = 9.1 , RD = 2.9, see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
MIN.
100
-
2.0
-
-
-
--
8.7
-
--
-1
-4
-4
-7
TYP. MAX. UNIT
- -V
0.13 - V/°C
- 4.0 V
- ± 100 nA
- 25
μA
- 250
0.077
- -S
1700
560
120
1
4
3
3
.5
-
-
-
72
11
32
-
-
-
-
-
.5 -
pF
nC
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-- 28
A
- - 110
Body Diode Voltage
VSD
TJ = 25 °C, IS = 28 A, VGS = 0 Vb
--
2.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μsb
-
180 360 ns
Qrr - 1.3 2.8 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91021
S11-0510-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRF540
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF540, SiHF540
Vishay Siliconix
VGS
102 Top 15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
101
4.5 V
10-1
91021_01
20 µs Pulse Width
TC = 25 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
102
25 °C
175 °C
101
91021_03
4
20 µs Pulse Width
VDS = 50 V
56 789
10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
102
Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
101 Bottom 4.5 V
4.5 V
10-1
91021_02
20 µs Pulse Width
TC = 175 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 °C
3.0
ID = 17 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160180
91021_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91021
S11-0510-Rev. B, 21-Mar-11
www
.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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