C5026 2SC5026 Datasheet

C5026 Datasheet, PDF, Equivalent


Part Number

C5026

Description

2SC5026

Manufacture

Panasonic Semiconductor

Total Page 2 Pages
Datasheet
Download C5026 Datasheet


C5026
Transistor
2SC5026
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SA1890
Unit: mm
s Features
q Low collector to emitter saturation voltage VCE(sat).
q High collector to emitter voltage VCEO.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage VCEO
80
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5 A
Collector current
IC
1A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 2A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
VCBO
VCB = 40V, IE = 0
IC = 10µA, IE = 0
0.1 µA
80 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 100mA
VCE = 2V, IC = 500mA*2
IC = 500mA, IB = 50mA*2
IC = 500mA, IB = 50mA*2
80
5
120 340
60
0.15 0.3
0.85 1.2
V
V
V
V
Transition frequency
Collector output capacitance
fT
Cob
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
120 MHz
10 20 pF
*2 Pulse measurement
*1hFE Rank classification
Rank
R
S
hFE1 120 ~ 240 170 ~ 340
1
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C5026
Transistor
PC — Ta
1.4
Printed circut board: Copper
foil area of 1cm2 or more, and
1.2 the board thickness of 1.7mm
for the collector portion.
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=10
30
10
3
25˚C
Ta=–25˚C
1
75˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Cob — VCB
60
50
40
30
20
10
0
1 3 10 30 100 300 1000
Collector to base voltage VCB (V)
IC — VCE
1.2
1.0
0.8
IB=8mA
7mA
6mA
5mA
0.6 4mA
3mA
0.4 2mA
1mA
0.2
0
0 26 4
8 10
Collector to emitter voltage VCE (V)
2SC5026
VCE(sat) — IC
10
IC/IB=10
3
1
0.3
0.1
0.03
0.01
Ta=75˚C
25˚C
–25˚C
0.003
0.001
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
hFE — IC
300
VCE=2V
250
200 Ta=75˚C
25˚C
150
–25˚C
100
50
0
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
fT — IE
200 VCB=10V
Ta=25˚C
160
120
80
40
0
–1 –3 –10 –30 –100 –300 –1000
Emitter current IE (mA)
2


Features Transistor 2SC5026 Silicon NPN epitaxia l planer type For low-frequency output amplification Complementary to 2SA1890 Unit: mm s Features q q q 4.5±0.1 1. 6±0.2 1.5±0.1 1.0–0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). High collector to emitter vo ltage VCEO. Mini Power type package, al lowing downsizing of the equipment and automatic insertion through the tape pa cking and the magazine packing. 2.6±0 .1 0.4max. 45° 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0. 04 s Absolute Maximum Ratings Paramete r Collector to base voltage Collector t o emitter voltage Emitter to base volta ge Peak collector current Collector cur rent Collector power dissipation Juncti on temperature Storage temperature * ( Ta=25˚C) Ratings 80 80 5 1.5 1 1 150 55 ~ +150 1cm2 Unit V V V A A W ˚C C 1:Base 2:Collector 3:Emitter 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg marking EIAJ:SC–62 Mini Power Type Package Marking symbol : 2A Printed circuit board: Copper foil area of thickn.
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