DatasheetsPDF.com

GT8G133

Part Number	GT8G133
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel IGBT
Published	Sep 3, 2014
Detailed Description	GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications • • • • Comp...
Datasheet	GT8G133 PDF File

Overview

GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications • • • • Compact and Thin (TSSOP-8) package Enhancement-mode 4-V gate drive voltage: VGE = 4.
0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation（t＝10 s） Junction temperature Storage temperature range DC Pulse Pulse (Note 1) (Note 2a) (Note 2b) Symbol VCES VGES VGES ICP PC (1) PC (2) Tj Tstg Rating 400 ±6 ±8 150 1.
1 0.
6 150 −55~150 Unit V V A W W °C °C 1.
2.
3 EMITTER 4 GATE 5.
6.
7.
8 COLLECTOR Note: Using continuously unde...

Similar Datasheet

GT8G101 Silicon N-Channel MOSFET - ETC
GT8G103 Silicon N-Channel MOSFET - Toshiba Semiconductor
GT8G121 Silicon N-Channel MOSFET - Toshiba Semiconductor
GT8G131 Silicon N-Channel MOSFET - Toshiba Semiconductor
GT8G132 Silicon N-Channel IGBT - Toshiba Semiconductor
GT8G133 Silicon N-Channel IGBT - Toshiba Semiconductor
GT8G134 Silicon N-Channel IGBT - Toshiba Semiconductor
GT8G136 Silicon N-Channel IGBT - Toshiba Semiconductor
GT8G151 Silicon N-Channel IGBT - Toshiba

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)