DatasheetsPDF.com

GT8G134

Silicon N-Channel IGBT

Description

GT8G134 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G134 Strobe Flash Applications Compact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=2.5V(min))/ Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse Pulse (Note 1) (...

Toshiba Semiconductor

Download GT8G134 Datasheet

Similar Datasheet

GT8G101 Silicon N-Channel MOSFET - ETC
GT8G103 Silicon N-Channel MOSFET - Toshiba Semiconductor
GT8G121 Silicon N-Channel MOSFET - Toshiba Semiconductor
GT8G131 Silicon N-Channel MOSFET - Toshiba Semiconductor
GT8G132 Silicon N-Channel IGBT - Toshiba Semiconductor
GT8G133 Silicon N-Channel IGBT - Toshiba Semiconductor
GT8G134 Silicon N-Channel IGBT - Toshiba Semiconductor
GT8G136 Silicon N-Channel IGBT - Toshiba Semiconductor
GT8G151 Silicon N-Channel IGBT - Toshiba

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)