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2SD689

Silicon NPN Darlington Power Transistor

Description

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Complement to Type 2SB679 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC...

INCHANGE

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