isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUT...