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ME9926

Matsuki
Part Number ME9926
Manufacturer Matsuki
Description Dual N-Channel 2.5-V (G-S) MOSFET
Published Jun 6, 2015
Detailed Description Dual N-Channel 2.5-V (G-S) MOSFET GENERAL DESCRIPTION The ME9926 is the Dual N-Channel logic enhancement mode power fiel...
Datasheet PDF File ME9926 PDF File

ME9926
ME9926

Overview
Dual N-Channel 2.
5-V (G-S) MOSFET GENERAL DESCRIPTION The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
ME9926 FEATURES ● RDS(ON)≦29mΩ@VGS=4.
5V ● RDS(ON)≦42mΩ@VGS=2.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-...


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