2SC5089. C5089 Datasheet

C5089 2SC5089. Datasheet pdf. Equivalent


Part C5089
Description 2SC5089
Feature TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5089 2SC5089 VHF~UHF Band Low Noise Amplif.
Manufacture Toshiba
Datasheet
Download C5089 Datasheet


TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5089 C5089 Datasheet
Recommendation Recommendation Datasheet C5089 Datasheet




C5089
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5089
2SC5089
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 20 V
Collector-emitter voltage
VCEO 10 V
Emitter-base voltage
VEBO 1.5 V
Base current
IB 20 mA
Collector current
IC 40 mA
Collector power dissipation
PC 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
S-MINI
JEDEC
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 12mg (typ.)
1 2010-02-17



C5089
2SC5089
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 20 mA, f = 1 GHz
VCE = 8 V, IC = 20 mA, f = 2 GHz
VCE = 8 V, IC = 5 mA, f = 1 GHz
VCE = 8 V, IC = 5 mA, f = 2 GHz
Min Typ. Max Unit
7 10 GHz
10 13
dB
7
1.1 2.5
dB
1.7
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 8 V, IC = 20 mA
⎯ ⎯ 1 μA
⎯ ⎯ 1 μA
50 160
Output capacitance
Reverse transfer capacitance
Cob
0.7
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
pF
Cre 0.5 1.0 pF
Note 1: hFE classification R: 50 to 100, O: 80 to 160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Marking
2 2010-02-17







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